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High-Resolution Nano - Topography for Flatness and Local Stress

Features

• Non-contact
• Imaging
• Nano-Topography and Local Stress measurement
• Die and Wafer Topography measurement capability
• Large working distance (10 mm or more)
• High lateral and height resolution
  

FSM 127 Principle of Operation

• A visible light imaging Michelson Low Coherence Interferometer
• Measures Flatness and Nano-Topography on Die-level
• Measurement area
• 40mm x 30 mm
• Uses interference patterns to determine the surface profile.

Localized Stress Measurement

Inputs to stress measurement w/ 127 system

• Local surface topography
• Local wafer thickness (FSM 413 Echoprobe)
• Local film thickness for most of conductive and insulating films (FSM Thin Film Probe or 4 point probe)

Output

• Local stress tensor components
• No third party input required

Configurations The following Configurations are available: ·

• FSM127 -150, -200, -300 (Semi-Automated System -motorized, x-y stage for mapping, manual sample load/unload, with MAX wafer diameter 150mm, 200mm, 300mm)
• FSM127-C2C -200, -300 (Fully Automated System with Robotic Wafer-Handler, 200mm or 300mm )