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Why Dedicated Cu – Metrology
- Required to avoid Cu contamination
- Cu is very oxidation sensitive: requires processing at < 10ppm oxygen
- Special Thermal Budget requirements up to 450°C
Application concerns - Industrial issue: Cu stress can cause reliability issues for wires or interconnects
- Stress in Cu can accelerate the electro-migration phenomenon
- After Cu film deposition: Wafers will face additional annealing or heating process steps of up to 450°C
Cu related Questions
Thermal Properties - Can the material withstand multiple heat cycles, up to 4500 C
- Stress Hysteresis effects
- Does it outgas
• Material Shrinkage
• Coefficient of Thermal Expansion
Mechanical Properties - Adhesive and Cohesive Strength
- Hardness, Modulus and Porosity
Specifications: - Characterization of Thermal Properties
- Combination of Metrology with High Temperature Annealing Chamber - Determine Residual Stress
- Study Stress Hysteresis over a Thermal Cycle
- Determine thermal stability of material
- Determine Coeff. of Thermal Expansion CTE
- Study of desorption and outgassing properties
- Vacuum or purging required
Optional Multiple Probes available for
- Laser Scanning for Film Stress Hysteresis Studies
- Thermal Stability Studies
- Thermal Desorption Spectroscopy
- Shrinkage Studies
- Reflectivity Studies
- Resistivity Studies
- Sealed vacuum chamber - oxidation free environment for Cu - material characterization
- Stress & TDS ( outgassing ) combination are very powerful process diagnostics tools for contamination and delamination problems