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FSM pioneered in the laser scanning technology for Film Stress and wafer bow measurement. Several hundred of these tools have been installed in almost every fab, and R&D facilities for Si, GaAS, InP or Flat panel facilities. Systems are available for room and high temperatures.


High temperature Stress measurements for characterization of thermal properties of new films and process development is available with the following products: FSM 500TC - Stress measurements from ambient to 500 degrees C, for samples up to 200 mm FSM 900LT - Stress Measurements from -90 deg C to 550 deg C FSM 900TC-vac - Stress Measurements from Ambient to 900 deg C, with options up to 1000 degrees C, for both 200 and 300 mm wafers. Operates in a controlled, oxygen free environment, under vacuum or inert gas.

Features

Great performance for a desktop film stress hysteresis unit.
Can measure film stress up to 500 C.
Can measure various wafer sizes.
Measures 40 data points per mm, 8k points / 200 mm scan.