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Products
Lattice Stress/ Micro RAMAN
FSM RAMAN 360 for SOI, SiGe, STI,MEMS

Local Stress, Flatness and Nano-Topography
FSM 127 Imaging Interferometer

Film Stress and Wafer Bow
FSM 128
FSM 128L for 300 mm

Wafer and Membrane Thickness/ Topography
Optical EchoProbe FSM 413

FSMA-VideoMic & FSMA-InnerVision – Video and x-ray based x-y-z measurement system
Wafer Thickness
FSM 413 -300

The FSM 413 EchoprobeTM sensor uses patent pending infrared (IR) interferometric technique, which provides a direct and accurate map of thick to ultra-thin wafers measurement of substrate thickness, and thickness variation (TTV). Several materials transparent in IR beam, such as Si, GaAs, InP, SiC, Glass, Quartz and many polymers are readily measured with standard spatial resolution of 60 microns spot, (smaller spot sizes are available). Using a Single probe system, substrate thickness of conventional wafers with patterns, tapes, bumps or bonded wafers mounted on carriers can be determined with high precision and accuracy. When configured as a Dual probe system, the FSM413 also provides measurements of total thickness of the wafer, including substrate thickness and the patterned height thickness. Options are available to measure wafer warp, trench depth and via holes, including high aspect ratio trenches and vias in MEMs type applications. Various specialized MEMs applications including membrane metrology are also available.

Frontier News
FSM proudly presents our latest offering:

Non contact resistivity on solar cell

FSM RTH surface roughness profiler

VideoMic and InnerVision

Auto IC de-caper

Resistivity with heat up to 500C

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