Material Characterization
| Integrated Metrology Annealing Chamber for Cu material characterization |
Why Dedicated Cu – Metrology
- Required to avoid Cu contamination
- Cu is very oxidation sensitive: requires processing at < 10ppm oxygen
- Special Thermal Budget requirements up to 450°C
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Application concerns
- Industrial issue: Cu stress can cause reliability issues for wires or interconnects
- Stress in Cu can accelerate the electro-migration phenomenon
- After Cu film deposition: Wafers will face additional annealing or heating process steps of up to 450°C
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| Cu related Questions |
Thermal Properties
- Can the material withstand multiple heat cycles, up to 4500 C
- Stress Hysteresis effects
- Does it outgas
- Material Shrinkage
- Coefficient of Thermal Expansion
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Mechanical Properties
- Adhesive and Cohesive Strength
- Hardness, Modulus and Porosity
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Specifications:
- Characterization of Thermal Properties
- Combination of Metrology with High Temperature Annealing
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Chamber
- Determine Residual Stress
- Study Stress Hysteresis over a Thermal Cycle
- Determine thermal stability of material
- Determine Coeff. of Thermal Expansion CTE
- Study of desorption and outgassing properties
- Vacuum or purging required
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Optional Multiple Probes available for
- Laser Scanning for Film Stress Hysteresis Studies
- Thermal Stability Studies
- Thermal Desorption Spectroscopy
- Shrinkage Studies
- Reflectivity Studies
- Resistivity Studies
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More Features
- Sealed vacuum chamber - oxidation free environment for Cu - material characterization
- Stress & TDS ( outgassing ) combination are very powerful process diagnostics tools for contamination and delamination problems
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