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FSM MC100 Metal Contamination Testing on Production Wafers

Fully Automated Robotic Handling Tools are available for 200 mm and 300 mm fabs.
Backside probing of in-line product wafers.
Local mapping of metals concentration,carrier diffusion length and lifetime.
Metal levels determined from ~3x109 to ~1x1014 atoms/cm3.
Fully- automated testing for 200 and 300 mm wafers.
Non-thermal metal-dopant dissociation procedure.
225 mapped data points per wafer.
Options for corona charge deposition and oxide charge measurements (plasma damage characterization).


Footprint: 300/200 mm dual FOUP:
1.16 (width) x 2.01 (Depth) m
300/200 manual loaded:
0.67 (width) x 0.92 (Depth) m