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  • The Related Product is Metal contamination, MC


    • Metal Contamination Testing on Production Wafers: MC100

    Backside probing of in-line product wafers.
    Local mapping of metal concentration, carrier diffusion length and     lifetime.
    Metal levels determined from -3x109 to -1x1014 atoms/cm3.
    Fully-automated testing for 200 mm and 300 mm wafers.
    Non-thermal metal-dopant dissociation procedure.
    225 mapped data points per wafer.
    Options for corona deposition and oxide charge measurements     (plasma damage characterization).

    Metal Contamination (MC) and Equivalent Oxide Thickness (EOT) Application Notes