Non-contact Sheet Resistance and Leakage Current Measurements forImplant & Annealing Monitoring for 65 and 45 nm CMOS Technologies.
Non-contact measurement of p-n junctions for sheet resistance and leakage current density.
Wide rande of measurement sensitivity:
Sheet resistance: 10 to >300,000 Ohm/square
Leakage current: 10-7 to 10-3 A/cm2
Mesurement capability demonstrated over entire process range for
CMOS transistor doping
Dose: 10 11 to >1015 ions/cm2
Energy: 0.1keV to >2 MeV
Junction Depth: -10 nm to >2 um.
High sheet resistance measurement repeatability, <0.1 % (for 100 repeated tests, single point), independent of junction depth.
Analysis capability for "simple" (single implants into test wafers) and "complex" (surface junctions in halo & well profiles) processes.
Rapid mapping capability: -1000 points in <2.5 min.
Available as fully-automated (such as 300 mm dual FOUP) and manual loaded ("R&D") versions
Non-Contact Sheet Resistance and Leakage Current RsL Application Notes