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  • The Related Product is FSM RsL100


    • FSM RsL100 Sheet Resistance and Leakage Current Mapping Tool

    Non-contact Sheet Resistance and Leakage Current Measurements forImplant & Annealing Monitoring for 65 and 45 nm CMOS Technologies.

    Non-contact measurement of p-n junctions for sheet resistance and     leakage current density.

    Wide rande of measurement sensitivity:
        Sheet resistance: 10 to >300,000 Ohm/square
        Leakage current: 10-7 to 10-3 A/cm2

    Mesurement capability demonstrated over entire process range for
        CMOS transistor doping
        Dose: 10 11 to >1015 ions/cm2
        Energy: 0.1keV to >2 MeV
        Junction Depth: -10 nm to >2 um.

    High sheet resistance measurement repeatability, <0.1 % (for 100     repeated tests, single point), independent of junction depth.

    Analysis capability for "simple" (single implants into test wafers) and     "complex" (surface junctions in halo & well profiles) processes.

    Rapid mapping capability: -1000 points in <2.5 min.

    Available as fully-automated (such as 300 mm dual FOUP) and manual loaded ("R&D") versions

    Non-Contact Sheet Resistance and Leakage Current RsL Application Notes