FSM Raman spectroscopy metrology
The inelastic scattering of photons in visible and NIR and UV with change
of frequency of scattered photon in the range of 100 - 5000 cm-1 is commonly
referred as Raman spectroscopy, and it has been recognized as an effective
tool for investigation of vibrational properties of semiconductor crystals since
early 1970s.
FSM R&D and engineering teams have further extended this well proven technology
to study of structures with complicated strain configurations involving strain
varying as function of the distance from the surface of device, where both diagonal
and off-diagonal strain components play important role - as it takes place in
novel strain silicon epi-layers and devices, SiGe structures, localized
oxidation of silicon (LOCOS) structures, and complicated micro-electro-mechanical
(MEMs) devices. It can be also used as an effective tool for characterization
of the device during final back grinding and packaging steps.
FSM tool offers very high spectral resolution, multiple excitation sources, phase
modulated thermoelectrically cooled (TEC) Charge Coupled Device (CCD)
detector, and full automation needed by modern semiconductor device manufacturing.
High spectral resolution of FSM system allows not only detecting minute strains in
the sample but also allows to study changes of Stokes line shapes and provides
powerful tool for study of scattering originating from various layers of the material.
Multiple excitation sources characterized by different wavelengths and different
penetration depths allow user to access and identify strained layers buried at
different depths inside semiconductor structure.
FSM Raman system is provided with standard Phase Modulated CCD allowing
eliminating liquid nitrogen cooling requirement, and simplifying maintenance
of the systems in industrial environment.
Finally FSM proprietary Stokes radiation polarization sensing technology allows
identifying various components of the strain tensor for many commonly encountered
structures.
FSM Raman system is provided with various microscope objectives and
detector options.
For more information on FSM Raman metrology, its advantages and limitations, and
solutions specific to your applications please contact us directly.
